WXNSIC G2021Q
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Üretici:WXNSIC
MFR. Part #:G2021Q
LCSC Part #:C41414474
Kılıf:DFN-8-EP(2x3)
Müşteri #:
Özellikler:Gate Driver IC MOSFET IGBT DFN-8-EP(2x3)
Datasheet:
WXNSIC G2021Q
Stok: 20002-4 Hafta İçinde Teslim
MiktarBirim Fiyat
5
11,41 ₺
KDV Dahil Toplam Tutar:
57,05 ₺
| Miktar | İndirim | Birim Fiyat |
| 5 - 49 | %0 | 11,41 TL |
| 50 - 149 | %22 | 8,90 TL |
| 150 - 499 | %32 | 7,76 TL |
| 500 - 2999 | %44 | 6,39 TL |
| 3000 - 5999 | %49 | 5,82 TL |
| 6000 - 10000000 | %52 | 5,48 TL |
Koleksiyon +Fiyat Alarmı
Ürün Açıklaması
Gate Driver IC MOSFET IGBT DFN-8-EP(2x3)
Ürün Özellikleri
| Özellik Tipi | Açıklama | |
|---|---|---|
| MPN | G2021Q | |
| Package | DFN-8-EP(2x3) | |
| Manufacturer | WXNSIC | |
| Current - Output Low(IOL) | 1.5A | |
| Low Level Delay Time | 150ns | |
| Input Logic Level - High | 2.5V | |
| Quiescent Current | 160uA | |
| Rise time | 50ns | |
| Voltage - Supply | 9V~20V | |
| Input Logic Level - Low | 800mV | |
| Fall time | 40ns | |
| High Level Delay Time | 140ns | |
| Load Type | MOSFET;IGBT | |
| Current - Output High(IOH) | 1.2A | |
| Driven Configuration | High Side;Low Side | |
| Operating Temperature | -40℃~+125℃ |
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